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Method and apparatus for in-situ and on-line monitoring of trench formation process
Method and apparatus for in-situ and on-line monitoring of trench formation process
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机译:用于沟槽形成过程的现场和在线监测的方法和设备
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摘要
An apparatus (20) for monitoring the trench formation process in a silicon wafer on a full in-situ and on-line basis. The apparatus includes two spectrometers (30A, 30B) for viewing the plasma used in the trench etching process at zero and normal angles of incidence with respect to the plane of the wafer, respectively. Both spectrometers are tuned to detect the radiation associated with a selected specie present in the plasma. Based on information contained in the output signals of the spectrometers, the depth D of the trench and the thickness Th and rate of deposition of the redeposited SiO.sub.2 layer are computed in real time. When the computed depth D matches a final depth of parameter, the trench formation process is terminated.
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