首页> 外国专利> Fault tolerant memory system which utilizes data from a shadow memory device upon the detection of erroneous data in a main memory device

Fault tolerant memory system which utilizes data from a shadow memory device upon the detection of erroneous data in a main memory device

机译:容错存储系统,它在检测到主存储设备中的错误数据时利用来自影子存储设备的数据

摘要

A fault tolerant memory system is disclosed which includes a main memory device, storing data and an associated error detecting code, and a shadow memory device, storing data corresponding to the data stored in the main memory. A multiplexer, selectively couples data from either the main memory device or the shadow memory device to an output terminal in response to a control signal. A controller reads the data and associated error detecting code from the main memory device and the corresponding data from the shadow memory device, and generates the multiplexer control signal such that the multiplexer couples data from the shadow memory device to the output terminal if the data from the main memory device is not the same as the data from the shadow memory device and the error detecting code indicate an error in the data from the main memory device, and otherwise couples the data from the main memory device to the output terminal.
机译:公开了一种容错存储系统,其包括:主存储设备,存储数据和相关的错误检测代码;以及影子存储设备,存储与存储在主存储器中的数据相对应的数据。多路复用器响应于控制信号将数据从主存储设备或影子存储设备选择性地耦合到输出端子。控制器从主存储设备中读取数据和相关的错误检测代码,并从影子存储设备中读取相应的数据,并生成多路复用器控制信号,以便多路复用器将数据从影子存储设备耦合到输出端子(如果来自主存储设备与来自影子存储设备的数据不同,并且错误检测代码指示来自主存储设备的数据中的错误,否则将数据从主存储设备耦合到输出端子。

著录项

  • 公开/公告号US5619642A

    专利类型

  • 公开/公告日1997-04-08

    原文格式PDF

  • 申请/专利权人 EMC CORPORATION;

    申请/专利号US19940363132

  • 申请日1994-12-23

  • 分类号G06F11/00;

  • 国家 US

  • 入库时间 2022-08-22 03:10:16

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