ANGLE-POLISHING SLURRY COMPOSITION FOR SEMICONDUCTOR WAFER, SLURRY COMPOSITION FEEDER, WAX-CLEANING COMPOSITION AND METHOD OF REMOVING ELECTRON WAX

摘要

PROBLEM TO BE SOLVED: To avoid scratchings an angle-polishing surface, without causing phenomenon of coagulation by further adding hydroxide water solution and deionized water to angle-polishing slurry. ;SOLUTION: This angle-polishing slurry composition of semiconductor wafer is composed of 700ml of conventional angle-polishing slurry containing silicon dioxide and aluminum oxide, whereto 100-200ml of 4% sodium hydroxide and 1000-7000ml of deiononized water are added. Accordingly, a large quantity of deionized water is further added to the existing stabilized angle-polishing slurry, so as to epochally reduce the coagulation phenomenon of a solid matter content of the slurry, thereby enabling the coagulation to be almost avoided. Furthermore, the angle-polishing time can be cut down especially, reducing the scratching on the single-polishing surface by enhancing the polishing effect due to the action of sodium hydroxide water solution.;COPYRIGHT: (C)1998,JPO