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Microwave pulse high power transistor

机译:微波脉冲大功率晶体管

摘要

PURPOSE: To promote the reduction in spurious radiation and to attain a high output by discharging a charge stored in the base-emitter junction of a transistor(TR) chip from a ground part electrode via an inductance element. ;CONSTITUTION: An electrode pad consitituting an internal matching circuit such as the electrode pad of a capacitance element 4 is connected to an outer package 3 forming a ground circuit via a grounding bonding wire 40. The length of the bonding wire 40 is selected so as to be sufficiently longer so that the impedance component is larger than the input impedance of a TR chip 1 at an amplification frequency band and no influence is given onto the amplification frequency hand. Furthermore, the inductance is set to a degree that the resistance is low at a low frequency band and a DC region so as not to increase spurious radiation. Thus, the charge stored in the base-emitter junction of the TR chip 1 is discharged to the outer package through the bonding wire 40 and the influence of other charge is eliminated.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:通过电感元件从接地电极上释放存储在晶体管(TR)芯片基极-发射极结中的电荷,从而促进杂散辐射的减少并获得高输出。 ;构成:构成内部匹配电路的电极垫,例如电容元件4的电极垫,通过接地键合线40连接到形成接地电路的外包装3上。键合线40的长度选择为为了使阻抗成分比TR芯片1的输入阻抗在放大频带大而足够长,不会对放大频率指针产生影响。此外,将电感设置为在低频带和DC区域的电阻低的程度,以便不增加寄生辐射。因此,存储在TR芯片1的基极-发射极结中的电荷通过键合线40释放到外包装中,并消除了其他电荷的影响。;版权所有:(C)1993,JPO&Japio

著录项

  • 公开/公告号JP2801805B2

    专利类型

  • 公开/公告日1998-09-21

    原文格式PDF

  • 申请/专利权人 株式会社東芝;

    申请/专利号JP19910263503

  • 发明设计人 日浦 滋;石橋 勝;

    申请日1991-10-11

  • 分类号H03K17/04;H03K17/16;

  • 国家 JP

  • 入库时间 2022-08-22 03:03:03

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