Method for anisotropically etching tungsten using SF6, CHF3, and N2

摘要

A method for etching a tungsten containing layer on a substrate substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate is placed in a plasma zone, and process gas comprising SF6, CHF3, and N2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.