(Ge, Si) Nx antireflection film and pattern forming method using the same

摘要

An antireflection film made of GeNx, which is used to prevent light incident on a photoresist film from being reflected from a base film during the manufacture of a semiconductor device, wherein the antireflection film made of GeNx further contains Si to form (Ge, Si) Nx And an antireflection film for manufacturing a semiconductor device. Since the antireflection film of the present invention has its water solubility controlled, the problem of the antireflection film being dissolved in water in the development process at the time of manufacturing a semiconductor device is improved.