InGaAsP / InP BH LD Manufacturing Method

摘要

The present invention provides a step of sequentially growing an n-InP buffer layer, InGaAsP active layer, p-InP cladding layer and a P ⁺ -InGaAsP cap layer to, n-InP substrate in production as a InGaAsP / InP BH LD, a P ⁺ -InGaAsP cap layer After the removal, forming a stripe with a silicon oxide film on the p-InP clad layer, forming a mesa with a melt bag by the liquid phase growth method, growing a current blocking layer, and after removing the silicon oxide film stripe The manufacturing method comprising the step of growing a p-InP clad layer and a P ⁺ -InGaAsP cap layer in turn, in the conventional method for producing BH LD by the liquid phase growth method in the step of forming a mesa structure While several etching and cleaning processes have to be used, in the present invention, the mesa is formed by the melt bag by one liquid phase growth method using the silicon oxide film stripe. Followed by growing the current blocking layer relates to the production of InGaAsP / InP BH LD method has the effect of shortening the manufacturing process.