Gallium Arsenide (GaAs) HEMT Device Manufacturing Method

摘要

The present invention relates to a method for manufacturing a GaAs HEMT device, in order to solve the problem of the conventional selective etching method of the uniformity of the device properties are lowered and the yield is reduced, using an epi structure doped AlGaAs layer and increased thickness, AlGaAs And a GaAs HEMT device manufacturing method capable of improving the uniformity of device characteristics and increasing the yield by performing gate recess etching of a HEMT using a phosphate etching solution having a similar etching rate in GaAs.