O3 TEOS USG (Undoped Silicate Glass) film formation method of semiconductor device

摘要

The method for forming an ozone theos USG film of a semiconductor device according to the present invention is a method of forming an ozone theos USG film on a base film by chemical vapor deposition, wherein the initial ozone concentration is low and after a predetermined time, The ozone theos USG film is formed in an ozone atmosphere.;Therefore, according to the present invention, there is an effect that the ozone theos USG film can be formed without the influence of the underlying film and without the additional process of forming the ammonia plasma treatment or the plasma applied oxide film.