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HOT-WALL TYPE RAPID THERMAL PROCESSING DEVICE

机译:热墙式快速热加工设备

摘要

Novel hot-walled RTP devices are disclosed. A reaction furnace having a solidified interior thereof, a first heater positioned at an upper end of an outer surface of the reactor for heating the high temperature part of the reactor, a lower end of the outer surface of the reactor and the lower temperature part for heating the low temperature part of the reactor; And a second heater positioned at a vertical lower end of the first heater, and a heat shield plate positioned between the first heater or the second heater and the reaction furnace and movable up and down. By preventing radiant heating from the top to the bottom, it is possible to reduce the length of the transition sheet and to eliminate thermal bundle differences between the wafer on top of the boat and the wafer on the bottom.
机译:公开了新颖的热壁RTP设备。具有固化内部的反应炉,位于反应器外表面的上端以加热反应器的高温部分的第一加热器,反应器外表面的下端和用于反应器的低温部分加热反应器的低温部分;第二加热器位于第一加热器的垂直下端,并且隔热板位于第一加热器或第二加热器与反应炉之间并且可上下移动。通过防止从顶部到底部的辐射加热,可以减小过渡片的长度并消除舟皿顶部的晶片与底部的晶片之间的热束差异。

著录项

  • 公开/公告号KR0121711Y1

    专利类型

  • 公开/公告日1998-08-17

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO.LTD;

    申请/专利号KR19950000687U

  • 发明设计人 이길광;

    申请日1995-01-18

  • 分类号H01L21/22;H01L21/324;

  • 国家 KR

  • 入库时间 2022-08-22 02:47:00

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