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Avoid V semiconductor process chamber diyong
Avoid V semiconductor process chamber diyong
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机译:避免V半导体制程室永用
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摘要
The subject innovation was the problem that the semiconductor P V diyong relates to a process chamber, in the prior art, the process is proceeded to without checking the location teuleojim of the wafer is located in the interior of the process chamber, damage to the wafer. The invented semiconductor P V diyong process chamber each step cheombeo 14 install three or more position detecting sensor 16 for sensing the position of the wafer therein, a wafer to detect whether or not the position detection sensor 16 by detecting the position of teuleojim, there is an effect which prevents damage to the wafer by step to stop the progress of the wafer when the twisted position.
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机译:主题创新是半导体P V diyong涉及处理室的问题,在现有技术中,在不检查晶片的位置teuleojim位于处理室的内部的情况下进行处理,从而损坏晶片。本发明的半导体PV diyong处理室,每一步都在斜槽14上安装三个或更多个位置检测传感器16,用于检测晶片中的位置,通过检测teuleojim的位置来检测位置检测传感器16是否存在,这种作用防止了在步进位置扭曲时损坏晶片以阻止晶片前进。
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