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Measurement method of coincidence error and measurement pattern of coincidence error

机译:重合误差的测量方法和重合误差的测量模式

摘要

It is possible to measure the coincidence error with high precision, and furthermore, the coincidence coincidence can be easily measured even after the semiconductor device is manufactured.;The distances between the edge portions 11a to 15a of the wirings 11 to 15 and the openings 21 to 25 provided in the insulating film covering the wirings 11 to 15 are sequentially changed in the same direction, The conduction state between the openings 11 to 15 and the openings 21 to 25 is checked. The number of sets of interconnecting wires 11 to 15 and the openings 21 to 25 is different by the matching error between the wirings 11 to 15 and the openings 21 to 25 in the same direction, . /RTI
机译:可以高精度地测量重合误差,此外,即使在制造半导体器件之后,也可以容易地测量重合重合。布线11至15的边缘部分11a至15a与开口21之间的距离。在同一方向上依次改变设置在覆盖布线11至15的绝缘膜中的绝缘层25至25,以检查开口11至15与开口21至25之间的导通状态。互连线11至15和开口21至25的组的数量由于布线11至15和开口21至25在相同方向上的匹配误差而不同。

著录项

  • 公开/公告号KR980011728A

    专利类型

  • 公开/公告日1998-04-30

    原文格式PDF

  • 申请/专利权人 이데이 노부유끼;

    申请/专利号KR19970034876

  • 发明设计人 나가노 다까시;

    申请日1997-07-25

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-22 02:45:28

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