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A low noise single ended input/differential output rf amplifier

机译:低噪声单端输入/差分输出射频放大器

摘要

An amplifier, suitable for RF applications, has good noise properties because of a special configuration of transistors 201 - 203. Transistors 201 and 202 are connected in a cascode configuration, to overcome the Miller effect. Transistors 202 and 203 have their bases driven by a common current source. The main current paths from ground to each of output terminals 221, 222 are essentially noise free. Transistor 201, acting as a transconductance amplifier, does introduce some noise though this is minimised by the use of an inductor 210. Transistor 304 forms a current source for the current path to output terminal 222. A differential output is achieved at terminals 221, 222 by way of transistors 202, 203 having complementary outputs. In another embodiment (Figure 4, not shown), a capacitor is connected across the collector and base electrodes of transistor 202 to introduce a further stage of gain.
机译:由于晶体管201-203的特殊配置,适用于RF应用的放大器具有良好的噪声特性。晶体管201和202以共源共栅配置连接,以克服米勒效应。晶体管202和203的基极由公共电流源驱动。从地到每个输出端子221、222的主电流路径基本无噪声。尽管用作跨导放大器的晶体管201确实引入了一些噪声,但是通过使用电感器210可以将其最小化。晶体管304形成了到输出端子222的电流路径的电流源。在端子221、222上实现了差分输出。通过具有互补输出的晶体管202、203。在另一个实施例中(图4,未示出),电容器跨接在晶体管202的集电极和基极之间,以引入另一级增益。

著录项

  • 公开/公告号GB2321150A

    专利类型

  • 公开/公告日1998-07-15

    原文格式PDF

  • 申请/专利权人 * PLESSEY SEMICONDUCTORS LIMITED;

    申请/专利号GB19970000487

  • 发明设计人 VIATCHESLAV IGOR * SOUETINOV;

    申请日1997-01-11

  • 分类号H03F3/45;

  • 国家 GB

  • 入库时间 2022-08-22 02:41:24

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