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Semiconductor memory device having redundancy memory cells incorporated into sub memory cell blocks
Semiconductor memory device having redundancy memory cells incorporated into sub memory cell blocks
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机译:具有并入子存储单元块中的冗余存储单元的半导体存储器件
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摘要
In a semiconductor memory device including first and second sub blocks each having a normal memory cell array and at least one redundancy memory cell row, and first and second sub block selecting circuits for selecting the first and second sub blocks, a multiplexer is connected between the first and second sub block selecting circuits and the first and second sub blocks, and redundancy memory cell row exchanging circuits for the redundancy memory cell rows are provided. The multiplexer is controlled in accordance with the output signals of the redundancy memory cell row exchanging circuits and the block selecting circuits, and the selection of the redundancy memory cell rows.
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