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Semiconductor device having a high current gain and a higher Ge amount at the base region than at the emitter and collector regions, and photoelectric conversion apparatus using the device
Semiconductor device having a high current gain and a higher Ge amount at the base region than at the emitter and collector regions, and photoelectric conversion apparatus using the device
A semiconductor device comprises at least an emitter region of a first conductivity type, a base region of a second conductivity type, and a collector region of a first conductivity type. The base region essentially consists of Si.sub.1-X Ge.sub.X (0 X 1), further comprises regions formed in a depletion layer close to an interface between the base region and the collector region or in the collector region and in a depletion layer close to an interface between the base region and the emitter region or in the emitter region, and has a larger Ge amount at the base region-side and a smaller Ge amount at the emitter and collector sides.
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机译:半导体器件至少包括第一导电类型的发射极区,第二导电类型的基极区和第一导电类型的集电极区。基极区基本上由Si 1-X Ge X(0 <X <1)组成,还包括在耗尽层中形成的区域,该耗尽层靠近基极区和集电极区之间或集电极中的界面。此外,在基极区域与发射极区域之间或在发射极区域之间的界面附近的耗尽层中的Ge区域中,在基极区域侧的Ge量较大,在发射极和集电极侧的Ge量较小。
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