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Inverted domain structure in ferroelectric crystals with polarization in the crystal plane

机译:铁电晶体中晶面极化的倒畴结构

摘要

Ferroelectric domain regions are formed in a ferroelectric crystal cut so that the polarization direction is in the plane of the crystal and is along the z direction is disclosed. A periodic ion exchange grating on the surface of the crystal with grating is provided on the surface of the crystal with grating lines parallel to the Z-axis of the crystal by a combination of photolithography and ion-exchange techniques and then applying a uniform field across two electrode pads on the crystal surface, thus creating an electric field opposite to the polarization direction (+ Z direction) of the crystal. The electric field reverses the domains in selective regions defined by the ion exchange grating formed in the earlier step. This gives rise to a periodically reversed domain grating on the crystal surface.
机译:公开了在切割的铁电晶体中形成铁电畴区域,使得极化方向在晶体平面内并且沿着z方向。通过光刻和离子交换技术的组合,在晶体表面上的周期性离子交换光栅提供在晶体表面上,其光栅线平行于晶体的Z轴,然后在晶体表面上的两个电极焊盘,从而产生与晶体的极化方向(+ Z方向)相反的电场。电场使在较早步骤中形成的离子交换光栅所定义的选择区域中的畴反转。这在晶体表面上产生了周期性反转的畴光栅。

著录项

  • 公开/公告号US5734772A

    专利类型

  • 公开/公告日1998-03-31

    原文格式PDF

  • 申请/专利权人 EASTMAN KODAK COMPANY;

    申请/专利号US19960685133

  • 发明设计人 VENKATRAMAN GOPALAN;MOOL C. GUPTA;

    申请日1996-07-24

  • 分类号G02B6/10;

  • 国家 US

  • 入库时间 2022-08-22 02:39:56

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