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Surge protective device having a surface collector region directly shorted to a base region
Surge protective device having a surface collector region directly shorted to a base region
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机译:具有直接短接至基极区域的表面收集器区域的电涌保护装置
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摘要
A surge protective device, which has a favorable surge- absorbing characteristic while avoiding increase in chip area and in process complexity, is disclosed. In a surge protective device having an ordinary planar bipolar transistor structure and having a voltage- regulation diode to absorb surge current by breakdown of a junction between an emitter region and base region thereof, a surface collector region thereof is shorted to the base region. Accordingly, when surge current is increased, a pn junction between a collector region and the base region is sufficiently forward biased, and thereby a backward transistor is formed. Surge current is sufficiently absorbed by the operation of the backward transistor.
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