首页> 外国专利> Method and apparatus coupling together magneto field effect transistors in series to accumulate the effects of magnetic field for improved sensitivity and linearity

Method and apparatus coupling together magneto field effect transistors in series to accumulate the effects of magnetic field for improved sensitivity and linearity

机译:串联耦合磁场效应晶体管以累积磁场效应以提高灵敏度和线性度的方法和装置

摘要

A circuit including daisy chain coupled triple drain magneto field effect transistors (MagFETs) for measuring magnetic field. The disclosed method and apparatus describe multiple MagFETs coupled together to accumulate voltage differentials generated in response to magnetic field. A lateral drain of a first triple drain MagFET is used to bias the gate of a second triple drain MagFET. The center drains and sources of each MagFET are biased with well matched current sources which permit the center drains and sources of each MagFET to float to a corresponding voltage biasing each triple drain MagFET near threshold. With the gate of each MagFET biased by a lateral drain of a prior MagFET, and with the source of each MagFET permitted to float to approximately a threshold voltage less than the corresponding gate voltage, the generated voltage differentials by each MagFET are accumulated thereby resulting in increased sensitivity to magnetic field. In addition, with the increased sensitivity, each MagFET is permitted to operate in a lower magnetic flux region resulting in improved overall linearity of differential voltage versus magnetic flux with the present invention.
机译:一种电路,包括用于测量磁场的菊花链耦合三重漏极磁场效应晶体管(MagFET)。所公开的方法和设备描述了耦合在一起以累积响应于磁场而产生的电压差的多个MagFET。第一三漏极MagFET的侧向漏极用于偏置第二三漏极MagFET的栅极。每个MagFET的中心漏极和源极均由匹配良好的电流源偏置,从而使每个MagFET的中心漏极和源极浮动到相应的电压,从而偏置每个三漏极MagFET接近阈值。每个MagFET的栅极被先前的MagFET的横向漏极偏置,并且每个MagFET的源极被浮动到大约小于相应栅极电压的阈值电压,每个MagFET产生的电压差被累积,从而导致对磁场的敏感性增加。另外,随着灵敏度的提高,本发明允许每个MagFET在较低的磁通量区域中操作,从而导致差分电压相对于磁通量的总体线性得到改善。

著录项

  • 公开/公告号US5760581A

    专利类型

  • 公开/公告日1998-06-02

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号US19960718625

  • 发明设计人 JEFFREY C. KALB JR.;

    申请日1996-09-17

  • 分类号G01R33/06;H03K17/687;H03K17/90;H01L27/22;

  • 国家 US

  • 入库时间 2022-08-22 02:39:29

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