首页> 外国专利> Differential to single ended conversion technique for an operational amplifier having low input offset voltage, high speed and high gain

Differential to single ended conversion technique for an operational amplifier having low input offset voltage, high speed and high gain

机译:具有低输入失调电压,高速和高增益的运算放大器的差分到单端转换技术

摘要

An operational amplifier having an input and an output stage. The input stage includes first and second source-coupled NMOS input transistors for accepting a differential input voltage and first and second PMOS load transistors for supplying current to each input transistor. A node between the first input transistor and first load transistor is coupled to a gate of a third PMOS transistor having its source coupled to a positive supply and its drain coupled to the sources of the input transistors and to a negative supply through a first biasing transistor. The output stage includes a fourth PMOS transistor having its gate coupled to a node between the second input transistor and the second load transistor and a source coupled to the positive supply voltage. A drain of the output transistor forms an output node and is coupled to the negative supply through a second biasing transistor. To minimize the input offset voltage, a ratio of the width- to-length of the third PMOS transistor to the width-to-length of the fourth PMOS transistor equals to a ratio of a quiescent drain current in the third PMOS transistor to a quiescent drain current in the fourth PMOS transistor. The load transistors have relatively large lengths for high gain while the third and fourth PMOS transistors have small lengths for high speed. Therefore, the operational amplifier has low input offset voltage, high speed and high gain.
机译:一种具有输入和输出级的运算放大器。输入级包括用于接受差分输入电压的第一和第二源极耦合的NMOS输入晶体管,以及用于向每个输入晶体管提供电流的第一和第二PMOS负载晶体管。第一输入晶体管和第一负载晶体管之间的节点耦合到第三PMOS晶体管的栅极,该第三PMOS晶体管的源极耦合到正电源,并且其漏极耦合到输入晶体管的源极和通过第一偏置晶体管耦合到负电源。 。输出级包括第四PMOS晶体管,其栅极耦合到第二输入晶体管和第二负载晶体管之间的节点,并且其源极耦合到正电源电压。输出晶体管的漏极形成输出节点,并通过第二偏置晶体管耦合到负电源。为了最小化输入失调电压,第三PMOS晶体管的宽度与长度之比与第四PMOS晶体管的宽度与长度之比等于第三PMOS晶体管中的静态漏极电流与静态电流之比。第四PMOS晶体管中的漏极电流。负载晶体管具有相对较大的长度以实现高增益,而第三和第四PMOS晶体管具有较小的长度以实现高速。因此,运算放大器具有低输入失调电压,高速和高增益。

著录项

  • 公开/公告号US5777514A

    专利类型

  • 公开/公告日1998-07-07

    原文格式PDF

  • 申请/专利权人 MICRO LINEAR CORPORATION;

    申请/专利号US19960721910

  • 发明设计人 ROHIT MITTAL;CARLOS ALBERTO LABER;

    申请日1996-09-27

  • 分类号H03F3/45;H03F3/16;

  • 国家 US

  • 入库时间 2022-08-22 02:39:08

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号