Base resistance controlled thyristor structure with high-density layout for increased current capacity

摘要

An insulated gate base resistance controlled thyristor with a high controllable current capability is described. The device has a high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure. The higher MOS channel density is achieved by contacting directly only the N.sup.++ emitter and the P.sup.+ cells (and not the P base region of the NPN transistor) to the cathode electrode. The N.sup.++ cells (i.e. the P base regions each containing an N.sup.++ emitter) and the P.sup.+ cells are connected in certain regions under the MOS gate by a P.sup.- region to provide a higher base resistance when a positive bias is applied to the MOS gate, thereby facilitating latching of the thyristor. The added MOS gate controlled base resistance between cells allows the P base cells to be designed with smaller dimensions for high maximum controllable current without affecting latch-up capability. The device is preferably provided in a checkerboard style cellular layout.