METHOD FOR MANUFACTURING THERMALLY STABLE CONTACT OBJECT HAVING DISPERSION-PREVENTING WALL AND CAPABLE OF RESISTING HIGH-TEMPERATURE PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thermally stable contact object having a despersion-preventing wall for a semiconductor device. ;SOLUTION: In order to produce a thermally stable dispersion wall for a contact object, a titanium layer 11 is formed on a substrate 10 on which a pattern is formed. A tungsten nitride layer 12 is formed on the titanium layer 11. After annealing, an interface layer 11' and a titanium nitride layer 12' are formed between a substrate 10 and a tungsten layer 13'. These layers can produce a dispersion-preventing wall which is thermally more stable than the titanium nitride layer directly formed on the substrate 10 and can form a contact structure capable of resisting to a following high temperature process.;COPYRIGHT: (C)1999,JPO