METHOD FOR DEPOSITING CUPROUS OXIDE FILM AND PRODUCTION OF SEMICONDUCTOR DEVICE USING DEPOSITING CUPROUS OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To enable quality cuprous oxide films to grow with good reproducibility on a substrate having low heat resistance by immersing the substrate having electrical conductivity and desired patterns on its front surface into a soln. in which copper ions and nitric acid ions coexist and impressing a negative voltage thereon to selectively deposit the cuprous oxide film on the pattern parts described above by a cathode reaction. ;SOLUTION: The production of semiconductor devices is specifically executed in the following manner: Plural electrically conductive rear surface electrodes are formed on the front surface of the insulative substrate and connecting ends consisting of Al are formed to cross part of the edges of the respective rear surface electrodes. The substrate is immersed into the soln. in which the copper ions and nitric acid ions coexist. The negative voltage is then impressed thereon. As a result, the cuprous oxide films of a (p) type are deposited by the cathode reaction only on the electrically conductive parts exclusive of the connecting ends. If the rear surface electrodes are metals, such as copper, a Schottky junction is formed. If a semiconductor of an (n) type, such as zinc oxide, is otherwise deposited thereon by a suitable method, a hetero junction is formed.;COPYRIGHT: (C)1999,JPO