首页> 外国专利> ZrO2 thin film and TiO2 thin film and the production manner

ZrO2 thin film and TiO2 thin film and the production manner

机译:ZrO2薄膜和TiO2薄膜及其生产方式

摘要

PURPOSE: To form a thin film of ZrO2 or TiO2 having a specified content of free carbon by supplying the β-diketon complex of Zr or Ti and gaseous oxygen on the surface of an Si substrate in a vacuum chamber and irradiating the substrate with a laser beam parallel to the substrate. ;CONSTITUTION: A vessel contg. an Si substrate 1 is evacuated, and the substrate 1 is heated to 510-600°C. A raw gas 4 consisting of the β-diketon complex of Zr or Ti and oxygen is supplied on the substrate 1, an XeCl excimer laser beam 2 is introduced into the vessel through an optical window 3 to irradiate the β-diketon complex of Zr or Ti without irradiating the substrate 1, the raw gas is brought into contact with the substrate 1 surface, and the ZrO2 film or TiO2 film contg. ≥30wt.% of free carbon is formed on the substrate 1.;COPYRIGHT: (C)1994,JPO
机译:目的:通过在ZrO 2 或TiO 2 上提供Zr或Ti和气态氧的β-二酮配合物,形成具有指定游离碳含量的薄膜。在真空室中的Si衬底的表面上,用平行于衬底的激光束照射衬底。 ;构成:一艘续航船只。抽空Si衬底1,并将衬底1加热到510-600℃。在基板1上供给由Zr或Ti的β-二酮络合物和氧组成的原料气体4,通过光学窗3将XeCl受激准分子激光束2引入容器中,以照射Zr或Ti的β-二酮络合物。在不照射基板1的情况下,使Ti与基板1的表面接触,使ZrO 2 膜或TiO 2 膜接触。基材1上形成≥30wt。%的游离碳;版权所有:(C)1994,JPO

著录项

  • 公开/公告号JP2894469B2

    专利类型

  • 公开/公告日1999-05-24

    原文格式PDF

  • 申请/专利权人 JAPAN ENAJII KK;

    申请/专利号JP19930076679

  • 发明设计人 TOKITA KOJI;OKADA FUMIO;

    申请日1993-04-02

  • 分类号C23C16/40;C23C16/48;H01L21/316;

  • 国家 JP

  • 入库时间 2022-08-22 02:31:10

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号