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PSEUDO-FUSE AND CIRCUIT USING PSEUDO-FUSE

机译:伪保险丝和使用伪保险丝的电路

摘要

PROBLEM TO BE SOLVED: To provide a first low resistance condition and a second higher resistance condition, and switch a condition to the second condition from the first condition when an electric current passes by including a polysilicon area coated with a silicide area of an upper surface between two contacts. ;SOLUTION: An upper surface 3 of a polysilicon area 2 formed on a separating layer 1 is silicified. First low resistivity can be substantially obtained by high electric conductivity of a silicide area (a first condition). When a high electric current flows between metallization contacts 5 and 6, a resistance between the contacts 5 and 6 is connected to a doping level of the polysilicon area 2, and reaches a very high value (a second condition). Programming is performed so as to automatically become the first or the second condition when power is turned on according to a condition of a pseudo-fuse.;COPYRIGHT: (C)1998,JPO
机译:要解决的问题:提供第一低电阻条件和第二较高电阻条件,并在电流通过包括覆盖上表面的硅化物区域的多晶硅区域时,将条件从第一条件切换到第二条件。在两个联系人之间。 ;解决方案:将在隔离层1上形成的多晶硅区域2的上表面3硅化。通过硅化物区域的高电导率(第一条件)可以基本上获得第一低电阻率。当高电流在金属化触点5和6之间流动时,触点5和6之间的电阻连接到多晶硅区域2的掺杂水平,并且达到非常高的值(第二条件)。进行编程,以便根据伪保险丝的情况在打开电源时自动变为第一或第二条件。版权所有:(C)1998,JPO

著录项

  • 公开/公告号JPH10340663A

    专利类型

  • 公开/公告日1998-12-22

    原文格式PDF

  • 申请/专利权人 ST MICROELECTRON SA;

    申请/专利号JP19980054824

  • 发明设计人 KALNITSKY ALEXANDER;FERRANT RICHARD;

    申请日1998-03-06

  • 分类号H01H85/04;

  • 国家 JP

  • 入库时间 2022-08-22 02:30:39

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