Production manner null of silicon

摘要

PURPOSE:To attain a fixed quantity of oxygen generated in a device process by slowly cooling the tail of a pulled silicon single crystal. CONSTITUTION:The tail of a silicon single crystal pulled up with a pulling device is passed through a temp. region of =800 deg.C positioned above the surface of molten silicon in the pulling device at 300-500mm interval at 0.8-1.5mm/min rate in 2-10hr.