FIELD EFFECT TRANSISTOR CONTROLLED THYRISTOR HAVING IMPROVED TURN-ON CHARACTERISTICS.

摘要

A composite thyristor comprising a plurality of parallel connected identical thyristor cells (40) each of the cells including a turn-on field effect transistor (FET) (72) and a turn-off FET (62). The gate electrodes (34) of all the FETs form a grid-like pattern on a surface of the semiconductor substrate of the device. The pattern includes strips which intersect at corners. Turn-off FETs (62) are formed along the boundary of the grid and beneath it, and turn-on FETs (72) are disposed beneath the corners.