Static memory cell with a pair of transfer MOS transistors, a pair of drive MOS transistors, and a pair of load elements

摘要

The first driving MOS transistor and the second driving MOS transistor are formed on the surface of the semiconductor substrate. The first load element is connected to the drain region of the first driving MOS transistor and the gate electrode of the second driving MOS transistor. The second load element is connected to the drain region of the second driving MOS transistor and the gate electrode of the first driving MOS transistor. The first transfer MOS transistor is formed on the surface of one of the source and drain regions connected to the drain region of the first driver MOS transistor. Further, the second transfer MOS transistor is formed at one surface of the source and drain regions connected to the drain region of the second drive MOS transistor. An interlayer insulating film is formed on the first driving MOS transistor, the second driving MOS transistor, the first transfer MOS transistor, and the second transfer MOS transistor. Word lines, first bit lines and second bit lines are formed on the interlayer insulating film. The word line is connected to a gate electrode of the first transfer MOS transistor and a gate electrode of the second transfer MOS transistor. The first bit line is connected to the other of the source and drain regions of the first transfer MOS transistor. The second bit line is connected to the other of the source and drain regions of the second transfer MOS transistor.