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FEA controlled by integrated MOSFET and manufacturing method thereof

机译:集成MOSFET控制的有限元分析法及其制造方法

摘要

The present invention relates to an FEA that is controlled by an integrated MOsFET having a structure in which the cathode electrode and the FEA are indirectly interconnected by a MOSFET while being isolated from each other and is capable of controlling the FEA emission current by a MOSFET, The uniformity of the emission current is improved, the stable emission current can be obtained, and the additional process necessary for interconnecting the FEA and the MOSFET can be eliminated, thereby significantly reducing the manufacturing cost of the FED.
机译:技术领域本发明涉及一种由集成式MOsFET控制的FEA,其具有这样的结构,其中阴极电极和FEA通过MOSFET间接互连而彼此隔离,并且能够通过MOSFET来控制FEA发射电流,发射电流的均匀性得到改善,可以获得稳定的发射电流,并且可以省去互连FEA和MOSFET所需的额外工艺,从而显着降低了FED的制造成本。

著录项

  • 公开/公告号KR19990008558A

    专利类型

  • 公开/公告日1999-02-05

    原文格式PDF

  • 申请/专利权人 하제준;이종덕;

    申请/专利号KR19970030569

  • 发明设计人 이종덕;김동환;

    申请日1997-07-02

  • 分类号H01J1/30;

  • 国家 KR

  • 入库时间 2022-08-22 02:18:04

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