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Development of densification heat treatment system to remove defects generated in the upper clad flame hydrolysis deposition process of planar silica optical waveguide

机译:致密化热处理系统的开发,以消除平面二氧化硅光波导的上包层火焰水解沉积过程中产生的缺陷

摘要

In the planar silica photonic waveguide film or silicon wafers, the interface between the upper clad layer and the densification heat treatment process is poor due to residual materials and uneven excess dopant after each interfacial process of the silicon substrate or silica waveguide, And defects such as porosity, particularly a large number of pores. In this case, not only the performance of the completed device is lowered due to the pores generated at this time, but the product itself is also discarded when the pore is severe, resulting in a large economic loss.;As a method for removing or suppressing pores in the upper clad layer fabrication process, up to now, it has been necessary to increase the density of the silica fparticles in the upper clad layer fabrication process, to decrease the heating rate or to use a vacuum heat treatment method However, there is no clear solution to this problem yet.;In the present invention, by understanding the mechanism of producing pores for removing defects such as interfacial bonding defects, crystal phases and pores in the upper clad layer manufacturing process by the flame hydrolysis deposition method, it is possible to provide an economical and continuous Densification heat treatment system.;The method developed by the present invention is a method in which a sample of fsilica particles deposited by a flame hydrolysis deposition method is rapidly heated at a temperature of about 500C in a heat treatment apparatus to rapidly heat the backside of the sample, Since residual materials or non-equilibrium dopants in the existing process start to be heated and vaporize, these vaporized gases easily escape to the surface of the upper layer of the sample before the fsilica particles are densified, , Defects such as crystal phase and pore can be removed.;Unlike the conventional method of increasing the density of fsilica particles in the flame hydrolysis deposition process, the apparatus developed in the present invention is capable of detecting defects such as pores, crystal phases and interface bonding defects, It is possible not only to improve the yield of the device, but also to add the rapid heating device to the densification heat treatment device which has been used in the past, thereby reducing the production cost of the device.;In addition, rapid heating and densification heat treatment can be performed at the same time without moving the sample, so that the sample is not exposed to the atmosphere, so contamination from the outside can be suppressed as much as possible, so that a high-quality device can be manufactured.
机译:在平面二氧化硅光子波导膜或硅晶片中,由于在硅衬底或二氧化硅波导的每个界面处理之后残留的材料和不均匀的过量掺杂剂,上覆层与致密化热处理工艺之间的界面较差,并且诸如孔隙率,特别是大量的孔隙。在这种情况下,不仅由于此时产生的细孔而降低了成品装置的性能,而且当细孔严重时,产品本身也被丢弃,导致巨大的经济损失。为了抑制上覆层制造过程中的孔,到目前为止,有必要在上覆层制造过程中增加二氧化硅颗粒的密度,以降低加热速率或使用真空热处理方法。尚未解决该问题。在本发明中,通过了解通过火焰水解沉积法在上覆层制造工艺中产生去除界面结合缺陷,晶体相和孔等缺陷的孔的机理,可以提供经济且连续的致密化热处理系统。本发明开发的方法是将二氧化硅颗粒样品d通过火焰水解沉积法沉积的金属在热处理设备中被快速加热到约500℃,以快速加热样品的背面,由于现有工艺中的残留材料或非平衡掺杂剂开始被加热和汽化,因此这些气化后的气体很容易逸出到二氧化硅颗粒致密化之前的样品的上层表面,可以消除诸如晶相和孔之类的缺陷。不同于传统的在火焰水解沉积中增加二氧化硅颗粒密度的方法在本发明中开发的设备能够检测诸如孔,晶相和界面结合缺陷之类的缺陷,不仅可以提高器件的成品率,而且还可以将快速加热设备添加到致密热中过去使用过的处理设备,从而降低了设备的生产成本。此外,快速加热和致密化可以在不移动样品的情况下同时执行离子热处理,从而样品不会暴露于大气,因此可以尽可能地抑制来自外部的污染,从而可以制造高质量的装置。

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