Storage medium for storing records of impurity concentration quantification method and impurity concentration quantification program

摘要

Pulse CV characteristic measurement and SIMS measurement for the semiconductor substrate are performed at the same position of the semiconductor substrate. Within a depth range in which the accuracy of the carrier concentration is guaranteed, the SIMS profile is corrected by the least squares method so that the dose taken from the SIMS profile matches the dose taken from the carrier concentration profile calculated from the pulse CV characteristics. When various kinds of impurities are injected, pulse CV measurement and SIMS measurement are performed and impurity concentration distribution and carrier concentration distribution are estimated by simulation each time an impurity is injected. When an impurity is injected at a high concentration, an impurity of a conductivity type opposite to that of the previous impurity is injected.