SI/SIGE MOS FET TRANSISTOR AND ITS FABRICATION PROCESS

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a metal-oxide-silicon field transistor (MOSFET) and a method of fabricating the same. The present invention relates to a method of manufacturing a silicon or silicon germanium thin film, which facilitates the adjustment of the threshold voltage and simultaneously the threshold voltage. It improves uniformity and reduces breakdown voltage, punch-through effect and drain-induced barrier lowering (DIBL) as the length of channel becomes smaller by isolating source and drain with insulating film. As described above, the present invention relates to a MOS field transistor capable of simultaneously achieving high speed, high frequency, and high output by preventing deterioration of device performance and a method of manufacturing the same.