method and device for applying a planarisierten dielectric layer on a halbleitersubstrat

摘要

This invention relates to methods and apparatus for treating a semiconductor substrate. The method principally includes treating the substrate by forming on the substrate a liquid short-chain polymer of the general formula Ra Si (OH)b or Ra SiHb (OH)c where a + b = 4 ou a + b + c = 4 respectively; a, b and c are integers, Ri is a carbon-containing group and Si-C bonding is inferred.