Method for producing a from silicide existing connection surface for a silicon region

摘要

Prodn. of a connection surface for a Si region comprises: (a) covering the Si region (3) with an etch stop layer; (b) applying a Si layer (10) on the etch stop layer; (c) applying a photomask (11) corresponding to the connection surface produced; (d) removing the Si layer (10) with the aid of the mask (11) selectively to the etch stop layer (9); (e) applying a metal (12) forming a silicide; and (f) producing the connection surface (13) in a siliconising step.