EDUCATION REQUIREMENT FOR ELECTROMAGNETIC RADIATION WITH DUNNFILM RANSISTERS

摘要

PCT No. PCT/CA94/00077 Sec. 371 Date Oct. 4, 1996 Sec. 102(e) Date Oct. 4, 1996 PCT Filed Feb. 11, 1994 PCT Pub. No. WO95/22176 PCT Pub. Date Aug. 17, 1995An electromagnetic radiation imaging device comprising an energy absorbing layer overlying an array of thin film transistors (TFTs). each of the thin film transistors incorporates a dual gate. The lower gate provides row selection, while the upper gate of the same device modulates current conducted by the transistor. By utilizing dual gates, a reduction in the number of transistors is achieved over prior art imaging devices, thereby increasing production yield. Furthermore, the use of dual gate transistors provides increased versatility in choosing the bias point of the transistors.