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Delay calculation method of the logic circuit, delay data calculation method of the delay calculation apparatus and delay library

机译:逻辑电路的延迟计算方法,延迟计算设备的延迟数据计算方法和延迟库

摘要

PROBLEM TO BE SOLVED: To surely obtain delay time by easily and analytically calculating the power supply voltage dependency of delay time of a logic circuit. ;SOLUTION: In a delay power supply coefficient determining process S03, the drain saturated current Idspi of a p-channel MOS FET is calculated based on prescribed operation power supply data 15 and saturated current parameters 16 such as the moving distance of a carrier and the thickness of an oxidized film based on the data 15 and then the ratio of the current Idspi to the drain saturated current Idsp0 of the p-channel MOS FET at the time of impressing reference power supply voltage Vdd0 is calculated to determine a delay power supply coefficient Kv at the time of impressing operation power supply voltage Vddi. In an effective delay calculation process S04, an effective delay calculation means multiples delay time at the time of impressing the reference power supply voltage Vdd0 calculated by a delay calculation means by the delay power supply coefficient Kv calculated by a delay power supply coefficient determining means to determine the delay time at the operation power supply voltage Vddi.;COPYRIGHT: (C)1999,JPO
机译:要解决的问题:通过轻松地分析逻辑电路的延迟时间的电源电压依赖性来确保获得延迟时间。 ;解决方案:在延迟电源系数确定过程S03中,根据规定的工作电源数据15和饱和电流参数16(例如载流子的移动距离和饱和电流),计算p沟道MOS FET的漏极饱和电流Idspi。根据数据15计算氧化膜的厚度,然后计算在施加参考电源电压Vdd0时的电流Idspi与p沟道MOS FET的漏极饱和电流Idsp0之比,以确定延迟电源系数在施加操作电源电压Vddi时的Kv。在有效延迟计算处理S04中,有效延迟计算装置将由延迟计算装置计算出的延迟电源系数Kv乘以由延迟计算装置计算出的基准电源电压Vdd0时的延迟时间。确定工作电源电压Vddi的延迟时间。;版权:(C)1999,JPO

著录项

  • 公开/公告号JP3054109B2

    专利类型

  • 公开/公告日2000-06-19

    原文格式PDF

  • 申请/专利权人 松下電器産業株式会社;

    申请/专利号JP19970223274

  • 发明设计人 初田 次康;

    申请日1997-08-20

  • 分类号G06F17/50;

  • 国家 JP

  • 入库时间 2022-08-22 02:05:52

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