首页> 外国专利> Composition for forming Bi-based ferroelectric thin film, Bi-based ferroelectric thin film and method for producing the same

Composition for forming Bi-based ferroelectric thin film, Bi-based ferroelectric thin film and method for producing the same

机译:用于形成Bi基铁电薄膜的组合物,Bi基铁电薄膜及其制造方法

摘要

PROBLEM TO BE SOLVED: To attain high residual polarization and to reduce the fatigue of a film without producing a thermally harmful effect on a substrate by substituting Ba and/or Pb for a part of Sr in a compsn. for an Sr-Bi-Ta ferroelectric substance. SOLUTION: Metallic compds. are mixed in an org. solvent so that the molar ratio among the metals in the resultant soln. is represented by A:B:C=X:Y:Z (where A is Sr and Ba and/or Pb, B is Bi, C is Ta and/or Nb, 0.4=X1.0, 1.5=Y=3.5 and z=2) and the molar ratio among Sr, Ba and Pb is represented by Sr:Ba:Pb=a:b:c (where 0.7X=aX and 0b+c=0.3X). The resultant compsn. for a thin film of a Bi-contg. ferroelectric substance is applied on a substrate, dried and calcined. These processes are repeated several times until the desired film thickness is attained and the formed thin film is fired and crystallized to obtain the objective thin film of a Bi-contg. ferroelectric substance.
机译:要解决的问题:通过在复合物中用Ba和/或Pb代替一部分Sr,获得高残留极化并减少薄膜的疲劳而不对基材产生热害效应。用于Sr-Bi-Ta铁电物质。解决方案:金属化合物。混在一个组织中。溶剂,使所得溶液中金属之间的摩尔比增加。用A:B:C = X:Y:Z表示(其中A是Sr和Ba和/或Pb,B是Bi,C是Ta和/或Nb,0.4 <= X <1.0,1.5 <= Y < = 3.5和z = 2),Sr,Ba和Pb之间的摩尔比用Sr:Ba:Pb = a:b:c表示(其中0.7X <= a

著录项

  • 公开/公告号JP3106913B2

    专利类型

  • 公开/公告日2000-11-06

    原文格式PDF

  • 申请/专利权人 三菱マテリアル株式会社;

    申请/专利号JP19950173438

  • 发明设计人 厚木 勉;米澤 政;小木 勝実;

    申请日1995-07-10

  • 分类号C01G29/00;H01L21/8242;H01L21/8247;H01L27/10;H01L27/108;H01L29/788;H01L29/792;

  • 国家 JP

  • 入库时间 2022-08-22 02:05:25

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