首页> 外国专利> HOLOGRAM MEMORY CONSISTING OF LITHIUM NIOBATE SINGLE CRYSTAL WITH IMPROVED PHOTOINDUCED REFRACTIVE INDEX CHARACTERISTICS AND PHOTOMULTIPLYING DEVICE USING THE MEMORY

HOLOGRAM MEMORY CONSISTING OF LITHIUM NIOBATE SINGLE CRYSTAL WITH IMPROVED PHOTOINDUCED REFRACTIVE INDEX CHARACTERISTICS AND PHOTOMULTIPLYING DEVICE USING THE MEMORY

机译:铌酸锂单晶体的全息存储器,具有改进的光致折光指数特性,并使用该存储器进行了光电倍增

摘要

PROBLEM TO BE SOLVED: To provide an LN single crystal hologram memory having high diffraction efficiency, no scattering of light and extremely excellent transmission characteristics. ;SOLUTION: The hologram memory consisting of a lithium niobate single crystal has 0.495 to 0.50 molar ratio of Li2O/(Nb2O5+Li2O), ≤1 cm-1 absorbance in 400 to 600 nm visible ray region and 20 to 27 cm-1 coupling coefft. without addition of a transition metal Fe, and has high hologram diffraction efficiency. After the lithium niobate single crystal is grown, the crystal may be subjected to heat treatment to control the writing rate and recording time of the hologram. In a device to write a hologram diffraction grating in a single crystal by using visible ray laser light to amplify the light, the above lithium niobate single crystal memory having high hologram diffraction efficiency is used as the single crystal.;COPYRIGHT: (C)2000,JPO
机译:要解决的问题:提供一种具有高衍射效率,无光散射和极佳的透射特性的LN单晶全息存储器。 ;解决方案:由铌酸锂单晶组成的全息图存储器的Li2O /(Nb2O5 + Li2O)摩尔比为0.495至0.50,在400至600 nm可见光区域的吸光度≤1 cm-1,耦合度为20至27 cm-1系数。无需添加过渡金属Fe,全息图衍射效率高。在铌酸锂单晶生长之后,可以对该晶体进行热处理以控制全息图的写入速率和记录时间。在通过使用可见光激光放大光将全息衍射光栅写入单晶的装置中,上述具有高全息衍射效率的铌酸锂单晶存储器用作单晶。版权所有:(C)2000 ,日本特许厅

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