VAPOR PHASE DOPING APPARATUS AND VAPOR PHASE DOPING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase doping apparatus and a method with which in-plane uniformity in an impurity diffused layer having a shallow joint can be improved. ;SOLUTION: A semiconductor substrate 11 is placed on a susceptor 10 within a reactor furnace 1, and a PH3 gas is fed into the reactor furnace 1 through a quartz gas nozzle 12, thereby doping the substrate 11 with P. In this processing, the PH3 gas jetted out of a gas diffusion hole 12a of the nozzle 12 is allowed to reflect at the inner wall of the reaction furnace 1, and the gas stream is directed at an angle of 45° to 90°, preferably at an angle vertical or approximately vertical to the surface of the substrate 11.;COPYRIGHT: (C)2000,JPO