MANUFACTURING InP DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To store the shape of a diffraction grating on the base surface contg. a specified substance in a good state by raising the base temp. up to the forming temp. of a thermal deformation-proof layer, and supplying specified substances, i.e., the material of this layer at once on the diffraction grating surface. ;SOLUTION: An n-InP substrate 10 is heated by the resistance heating method while a wafer carrier rotates at a fixed speed to rotate the substrate 10 on the wafer carrier at the same fixed time, and a raw material of a thermal deformation-proof layer, i.e., (C2H5)3Ga and AsH3 are uniformly distributed on the surface BS of the substrate 10 to substantially uniformize the thickness of the thermal deformation-proof layer on the surface BS. Then H2 is fed in a growing chamber R, the substrate 10 is heated up to 350°C in the forming temp. range of the thermal deformation proof layer 20 and stabilized at the temp. 350°C.;COPYRIGHT: (C)2000,JPO