GATE ELECTRODE FORMATION METHOD FOR TITANIUM POLYCIDE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To prevent abnormal oxidation of a gate electrode, while the resistance of the gate electrode is reduced at its reoxidation. SOLUTION: On a semiconductor substrate 21, a gate oxide film 22, a polysilicon film 23, a titanium silicide film 24 are sequentially formed, a mask insulating film 25 of a gate electrode shape is formed on the titanium silicide 24. Then with the mask insulating film 25 as an etching mask, the titanium silicide film 24 and the polysilicon film 23 are etched to form a gate electrode, and the substrate is oxidized in a reoxidation process, so that an oxide film of constant thickness is formed on the sidewall of a gate electrode and the substrate surface. Here, the reoxidation process is performed through dry oxidation of 750 deg.C or below, also it is performed at 700-750 deg.C, with the oxide film being formed to a thickness of 30-60 (desirably about 50 ).