REMOVAL OF POST RIE SIDEWALL POLYMER RAIL ON AL/CU METAL LINE OF SEMICONDUCTOR OR MICROELECTRONIC COMPOSITE STRUCTURE AND TOOL FOR ETCHING INTEGRATED METAL

摘要

PROBLEM TO BE SOLVED: To provide a method for removing post reactive ion etch sidewall polymer rails on an Al/Cu metal line of a semiconductor or microelectronic composite structure.;SOLUTION: A mixture of an etching gas and an acid neutralizing gas is supplied to a vacuum chamger wherein a composite structure is supported to form a water soluble material of sidewall polymer rails left behind on an Al/Cu metal line from an anisotropic RIE(reactive ion etching) process. Then, the water soluble material is removed with deionized water and photo resist is removed from the composite structure by either a water-only plasma process or a chemical down stream etching method. Or, a water-only plasma process is formed to strip the photo resist layer of a semiconductor or microelectronic composite structure previously subjected to a RIE proccess. Then, a mixture of an etching gas and an acid neutralizing gas is supplied into a vacuum chamber on which the structure is supported to form a water soluble material of sidewall polymer rails and then the water soluble material is removed with deionized water.;COPYRIGHT: (C)2000,JPO