MANUFACTURE OF SOI WAFER BY HYDROGEN-ION IMPLANTATION STRIPPING METHOD AND SOI WAFER MANUFACTURED THEREBY

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high quality SOI wafer through the hydrogen-ion implantation stripping method by removing a damaged layer remaining on a SOI layer surface after stripping and the surface roughness, while film thickness uniformity of the SOI layer is maintained.;SOLUTION: The method for manufacturing an SOI wafer by the H-ion implantation stripping method comprises forming an oxide film on an SOI layer through heat treatment in an oxidative atmosphere after a bonding heat treatment, removing the oxide film, and heat treating in a reducing atmosphere. The oxide film is formed on the SOI layer by the heat treatment in an oxidative atmosphere after a stripping heat treatment, the oxide film is removed and heat treatment in a reducing atmosphere is applied thereon.;COPYRIGHT: (C)2000,JPO