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DEVICE FOR PULLING SINGLE SILICON CRYSTAL AND PULLING OF THE CRYSTAL

机译:拉单晶硅和拉晶的装置

摘要

PROBLEM TO BE SOLVED: To provide a device for pulling a single silicon crystal, capable of inhibiting the deterioration of a heater and a quartz crucible and simultaneously capable of improving a solidifying rate of melted silicon. ;SOLUTION: This device for pulling a single silicon crystal is provided with heater-lifting means 41 for lifting or lowering a bottom carbon heater 27 independently of a crucible-lifting means 17. This method for pulling the single silicon crystal comprises lifting the bottom carbon heater 27 by the use of the heater- lifting means 41 independently of the crucible-lifting means 17, when a single silicon crystal bar 25 is pulled. The heater-lifting means 41 have support bars 42, driving gears and driving motors 46, respectively. The bottom carbon heater 27 comprises one or more ring-like carbon members concentrically disposed around a support shaft 16. Each of the support bars 42 has auxiliary bars disposed for ring-like carbon members, respectively.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:提供一种提拉单晶硅的装置,该装置能够抑制加热器和石英坩埚的劣化,并且同时能够提高熔融硅的凝固速率。 ;解决方案:该用于提拉单晶硅的装置设有加热器提起装置41,该提拉器41用于独立于坩埚提提装置17提起或降低底部碳加热器27。该提拉单晶硅的方法包括提起底部碳素。当拉动单个硅晶体棒25时,通过使用加热器提升装置41独立于坩埚提升装置17来使用加热器27。加热器提升装置41具有支撑杆42,驱动齿轮和驱动马达46。底部碳加热器27包括围绕支撑轴16同心地布置的一个或多个环状碳构件。每个支撑杆42具有分别布置成用于环状碳构件的辅助杆。版权所有:(C)2000,JPO

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