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Doping frit suitable for producing electrically-conduction ceramic enamels and process for producing thereof
Doping frit suitable for producing electrically-conduction ceramic enamels and process for producing thereof
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机译:适用于生产导电陶瓷搪瓷的掺杂玻璃料及其生产方法
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摘要
In the present invention, there is disclosed a doping frit suitable for producing electrically-conducting ceramic enamels containing 45 to 65 percent by weight of SiOi2 based on the doping frit total weight, and 55 to 35 percent by weight of a mixture of oxides that comprises: at least, an oxide of a divalent element, in a proportion, by weight, lying between 3 and 35 percent by weight; at least, an oxide of a trivalent element in a proportion, by weight, lying between 3 and 25 percent by weight; and an oxide of a doping element being selected from the group consisting of Lii2O, CuO, Sbi2Oi3, Sbi2Oi5, Bii2Oi3, Vi2Oi3, Vi2Oi5, and mixtures thereof, in a proportion, by weight, lying between 0.1 and 5 percent by weight. There is also disclosed a process for preparing the above-described doping frit, further a method of obtaining vitrifiable anti-electrostatic enamel and a corresponding ceramic product.
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机译:在本发明中,公开了一种掺杂玻璃料,该掺杂玻璃料适用于生产导电陶瓷搪瓷,其包含基于掺杂玻璃料总重量的45至65重量%的SiO 2,和55至35重量%的氧化物混合物,其包含: :至少二价元素的氧化物按重量计的比例为3-35重量%;至少三价元素的氧化物的重量比例为3-25重量%;掺杂元素的氧化物选自Li 2 O,CuO,Sbi 2 Oi 3,Sbi 2 O 15,Bi 2 O 13,Vi 2 O 13,Vi 2 O 15以及它们的混合物,其比例按重量计介于0.1%和5%之间。还公开了一种制备上述掺杂玻璃料的方法,还提供了一种获得可玻璃化的抗静电搪瓷和相应的陶瓷产品的方法。
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