首页> 外国专利> SHAPED SPIN VALVE TYPE MAGNETORESISTIVE TRANSDUCER AND METHOD FOR FABRICATING THE SAME INCORPORATING DOMAIN STABILIZATION TECHNIQUE

SHAPED SPIN VALVE TYPE MAGNETORESISTIVE TRANSDUCER AND METHOD FOR FABRICATING THE SAME INCORPORATING DOMAIN STABILIZATION TECHNIQUE

机译:异型自旋阀式磁致电阻传感器和制造相同掺入域稳定技术的方法

摘要

A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.
机译:磁阻换能器及其制造方法包括自旋阀结构,该自旋阀结构包括被钉扎的底部铁磁层和被薄的非磁性金属间隔层隔开的有源的顶部铁磁层。有源铁磁层和下面的间隔层形成为具有渐缩的相对侧面的台面结构,以在薄膜制造过程中促进更好的表面平坦化。一对永磁体层部分可以以大体上共面的关系沉积在自旋阀结构的端部处以促进畴稳定,但是也可以通过相对较薄的分离层与其分离。通过光刻定义覆盖有源铁磁层的永磁体层部分之间的间隔,可以准确和可重复地确定设备的磁读取轨道宽度。

著录项

  • 公开/公告号EP0759202A4

    专利类型

  • 公开/公告日1999-12-22

    原文格式PDF

  • 申请/专利权人 QUANTUM CORPORATION;

    申请/专利号EP19960908694

  • 发明设计人 NIX J. LAMAR;KIM YOUNG KEUN;

    申请日1996-03-04

  • 分类号G11B5/39;G01R33/02;H01L43/08;

  • 国家 EP

  • 入库时间 2022-08-22 01:49:59

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