PROCESS FOR PRODUCING A Si/FeSi2-HETEROSTRUCTURE

摘要

A process is disclosed for producing a silicon-iron silicide-heterostructure for electronic components. The object of the invention is to obtain a process that allows optoelectronic heterostructures composed of silicon and semiconductive FeSi2? to be produced so that silicon technology optoelectronic components may be integrated. For that purpose, high-energy Fe-ions are first implanted in the silicon substrate. This structure is then temper-hardened at a temperature above the transformation temperature of FeSi2? until a continuous layer made of metallic FeSi2? is created in the silicon substrate. Nuclei are then implanted in said layer. Finally, this Si/FeSi2?-heterostructure is tempered below the transformation temperature. As result a continuous layer composed of semiconductive FeSi2? is obtained.