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Electron beam source and its manufacturing method, and electron beam source apparatus and electronic beam apparatus using the same
Electron beam source and its manufacturing method, and electron beam source apparatus and electronic beam apparatus using the same
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机译:电子束源及其制造方法,以及使用该电子束源的电子束源设备和电子束设备
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摘要
An electron beam source is provided with an electron forming means (12,2,3) such as a doped layer of Si (2) for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer (4) and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided.
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