the drain region is far from complete. the monochrome fermi threshold field effect transistor and its manufacturing method

摘要

fermi - FET is far from the drain region to a small drainage area and the relationship with, the drain bias of the area came from the channel of the carrier injection to reduce or to prevent, is welcomed. the drain end of the channel region is in the field of a vertical electric machine, but also to allow the drain inductance and a barrier to prevent the di. at the end of the drain field. the field is small and the drain area located in the middle, below the surface. the area came from the drainage area to be extended to the counter doping of the buried layer, is the embodiment of uc9c1ud558. the counter doping of buried layer are to be put on a sound and the drain region in the layer to provide the three pieces of the structure can be used to form. the drain field. the field is usually in the MOSFET are also can be used.the channel region is epitaxial growth method to form a coating which is welcomed, along with the channel region, the drain region on the far end of the drug need to be. therefore, a doping level on the channel of a higher degree of load transfer may be obtained.