High temperature high voltage operation test mode (BURN-IN TEST MODE) entry improvement device of semiconductor device

摘要

The apparatus for improving the entry of the high temperature high voltage operation test mode of the semiconductor device is to detect the level of the substrate bias voltage of the semiconductor chip itself and prevent the entry into the high temperature high voltage operation test mode in an unstable state. In the apparatus for improving the entry of a high temperature high voltage operation test mode (Burn_In Test Mode) of a semiconductor device having a bias voltage generator, the level of the substrate bias voltage branched from the substrate bias voltage generator and a reference voltage level are compared. And a substrate bias voltage level sensing means for outputting a high temperature high voltage operation test disable signal, and a switching means for switching the high temperature high voltage operation test disable signal to block the high temperature high voltage operation test disable signal. It is composed.