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FORM SIMULATION DEVICE AND ITS SIMULATING METHOD BY THE USE OF THE MONTE CARLO METHOD

机译:蒙特卡罗方法的表格模拟装置及其模拟方法

摘要

A bulk plasma analysis unit that analyzes the bulk plasma region and calculates the time variation of the potential, particle density, and sheath length in the plasma when RF bias is applied, and the type of incident particles based on the obtained particle density. The surface reaction calculation section that determines the adsorption of the sheath plasma analysis section and the surface of the target material to which the incident particles collide, and determines the type of reaction between the incident particles and the adsorbed species determined by the sheath plasma analysis section. And a shape simulation device including shape calculation means for calculating the shape of the material to be etched according to the type of reaction determined by the surface reaction calculation unit.
机译:体等离子体分析单元,其分析体等离子体区域并在施加RF偏压时计算等离子体中的电势,颗粒密度和鞘长度的时间变化,以及基于所获得的颗粒密度来计算入射颗粒的类型。表面反应计算部,其确定鞘血浆分析部的吸附和与入射粒子碰撞的靶材的表面,并确定入射粒子与由鞘血浆分析部确定的吸附物之间的反应类型。 。以及一种形状模拟装置,其包括用于根据由表面反应计算单元确定的反应类型来计算待蚀刻材料的形状的形状计算装置。

著录项

  • 公开/公告号KR100231503B1

    专利类型

  • 公开/公告日1999-11-15

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号KR19960067278

  • 发明设计人 오오따 도시유끼;

    申请日1996-12-18

  • 分类号H01L21/31;

  • 国家 KR

  • 入库时间 2022-08-22 01:46:24

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